EPITAXIAL-GROWTH OF ULTRATHIN LAYERED OXIDE-FILMS - MGO ON NIO MO(100)/

Citation
Ml. Burke et Dw. Goodman, EPITAXIAL-GROWTH OF ULTRATHIN LAYERED OXIDE-FILMS - MGO ON NIO MO(100)/, Surface science, 311(1-2), 1994, pp. 17-23
Citations number
22
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
311
Issue
1-2
Year of publication
1994
Pages
17 - 23
Database
ISI
SICI code
0039-6028(1994)311:1-2<17:EOULO->2.0.ZU;2-F
Abstract
Ultrathin epitaxial films of MgO(100) have been grown on NiO(100) film s on a Mo(100) substrate. ISS results demonstrate that the NiO surface is almost completely masked for MgO coverages of 2 ML, and LEED studi es confirm that the growth of MgO is epitaxial. The electronic structu re probed by ELS demonstrates the development of MgO surface band stru cture through the sequential appearance of MgO transitions, but there are no transitions apparent which involve interface states. Increasing the thickness of the MgO overlayer on NiO induces an upward shift in the Ni(2p3/2) XPS binding energy, with a shift of 1.0 eV for 7.5 ML of MgO, indicating that there is transfer of negative charge from the Mg O to the NiO. Our findings for the growth of MgO on NiO demonstrate th e feasibility of synthesis and study of ordered, layered, mixed oxide films only a few angstrom thick.