A BASE-BAND NDS ELECTRODE CONFIGURATION FOR HACT DEVICES

Heterostructure Acoustic Charge Transport (HACT) devices have been fab ricated with a new nondestructive sense (NDS) electrode structure that provides for the recovery of base-band signals without the use of an integrating capacitor. This electrode structure provides an output sig nal comprising an RF carrier at the SAW frequency, amplitude modulated by the sampled input signal which has been delayed by a period propor tional to the output electrodes distance from the input diode. The out put of the NDS electrode structure is subsequently demodulated to prov ide the base-band signal.