PRODUCTION OF ELECTRON-CYCLOTRON-RESONANCE PLASMA FOR UNIFORM DEPOSITION USING A TE01 MODE MICROWAVE

Authors
HIDAKA R YAMAGUCHI T TSURUTA A TANAKA M KAWAI Y
Citation
R. Hidaka et al., PRODUCTION OF ELECTRON-CYCLOTRON-RESONANCE PLASMA FOR UNIFORM DEPOSITION USING A TE01 MODE MICROWAVE, Review of scientific instruments, 65(5), 1994, pp. 1590-1593
Citations number
13
Categorie Soggetti
Physics, Applied","Instument & Instrumentation
Journal title
Review of scientific instruments → ACNP
ISSN journal
00346748
Volume
65
Issue
5
Year of publication
1994
Pages
1590 - 1593
Database
ISI
SICI code
0034-6748(1994)65:5<1590:POEPFU>2.0.ZU;2-Y
Abstract
An electron cyclotron resonance (ECR) plasma is produced at pressures up to 10 mTorr with a circular TE01 mode microwave. The plasma density is almost radially uniform even at 10 mTorr. SiC films are formed on silicon wafers by introducing methane gas into the ECR plasma. It is s hown that a circular TE01 mode microwave is useful for the ECR plasma chemical vapor deposition (CVD).