BICMOS CIRCUIT TECHNOLOGY FOR A 704 MHZ ATM SWITCH LSI
Citation
Y. Ohtomo et al., BICMOS CIRCUIT TECHNOLOGY FOR A 704 MHZ ATM SWITCH LSI, IEEE journal of solid-state circuits, 29(5), 1994, pp. 557-563
Categorie Soggetti
Engineering, Eletrical & Electronic
SICI code
0018-9200(1994)29:5<557:BCTFA7>2.0.ZU;2-M
Abstract
This paper describes BiCMOS level-converter circuits and clock circuit
s that increase VLSI interface speed to 1 GHz, and their application t
o a 704 MHz ATM switch LSI. An LSI with high speed interface requires
a BiCMOS multiplexer/demultiplexer (MUX/DEMUX) on the chip to reduce i
nternal operation speed. A MUX/DEMUX with minimum power dissipation an
d a minimum pattern area can be designed using the proposed converter
circuits. The converter circuits, using weakly cross-coupled CMOS inve
rters and a voltage regulator circuit, can convert signal levels betwe
en LCML and positive CMOS at a speed of 500 MHz. Data synchronization
in the high speed region is ensured by a new BiCMOS clock circuit cons
isting of a pure ECL path and retiming circuits. The clock circuit red
uces the chip latency fluctuation of the clock signal and absorbs the
delay difference between the ECL clock and data through the CMOS circu
its. A rerouting-Banyan (RRB) ATM switch, employing both the proposed
converter circuits and the clock circuits, has been fabricated with 0.
5 mum BiCMOS technology. The LSI, composed of CMOS 15 K gate LOGIC, 8
Kb RAM, 1 Kb FIFO and ECL 1.6 K gate LOGIC, achieved an operation spee
d of 704-MHz with power dissipation of 7.2 W.