COPPER IN ULTRA-PURE GERMANIUM - DETERMINATION OF THE ELECTRICALLY ACTIVE FRACTION

Authors
ANDREEV BA DEVYATYKH GG GAVVA VA GORDEEV DM GUSEV AV MAKSIMOV GA PIMENOV VG SHMAGIN VB TIMONIN DA
Citation
Ba. Andreev et al., COPPER IN ULTRA-PURE GERMANIUM - DETERMINATION OF THE ELECTRICALLY ACTIVE FRACTION, Semiconductor science and technology, 9(5), 1994, pp. 1050-1053
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Pages
1050 - 1053
Database
ISI
SICI code
0268-1242(1994)9:5<1050:CIUG-D>2.0.ZU;2-B
Abstract
This paper reports direct measurement of the total Cu concentration an d its electrically active fraction in ultra-pure Ge crystals. The frac tion of electrically active Cu atoms is shown to be 3 x 10(-3) in hydr ogen-grown Ge and 3 x 10(-2) in vacuum-grown Ge. The state of Cu in ul tra-pure Ge crystals and the passivation of electrically active Cu-rel ated centres by hydrogen are discussed.