G. Samudra et al., THE ROLE OF VELOCITY SATURATION IN THE SWITCHING DELAY OF AN R-C LOADED INVERTER, Semiconductor science and technology, 9(5), 1994, pp. 1108-1116
Exact analytical expressions for the switching delay of an inverter dr
iving an RC load, taking into account the velocity saturation, are obt
ained. Modified expressions to include the effect of source resistance
are then presented. Owing to the limitation on switching current impo
sed by the velocity saturation mechanism, the switching delay is subst
antially increased for identical width-to-length ratios of the MOSFET
in a complementary MOS logic circuit. Obviously, it is important to in
crease the saturation velocity by miniband engineering or otherwise to
improve the performance. However, it is found that the improvements i
n the time delay are marginal after a saturation velocity of 2.4 x 10(
7) cm s-1 is reached. The effect of technologies aimed at circumventin
g the hot-electron and other deleterious effects is a longer delay tim
e of the circuit due to increased series resistance. However, the effe
ct of increased series resistance is substantially damped due to veloc
ity saturation. These results are particularly important in designing
CMOS circuits with submicrometre MOSFET dimensions.