H. Ghafourishiraz et al., STRUCTURAL DEPENDENCE OF 3-PHASE-SHIFT DISTRIBUTED-FEEDBACK SEMICONDUCTOR-LASER DIODES AT THRESHOLD USING THE TRANSFER-MATRIX METHOD, Semiconductor science and technology, 9(5), 1994, pp. 1126-1132
The three-phase-shift (3PS) distributed feedback (DFB) laser is known
to have improved performance over the lambda/2 DFB laser because the s
patial hole burning effect is suppressed. When optimizing the structur
al design of the 3PS DFB laser, the threshold gain difference and the
field distribution along the laser cavity have been selected as the de
sign criteria. Using the transfer matrix method, it is found that the
optimum phase-shift values and their positions are in trade-off when o
ne attempts to optimize both the gain difference and field uniformity
simultaneously.