MAGNETIC-FIELD EFFECTS ON INP INGAAS QUASI-BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTORS

An analysis of the effects of a magnetic field applied perpendicular a nd parallel to the initial injection velocity of ballistically injecte d energetic electrons in a quasiballistic heterojunction bipolar trans istor has resulted in an expected reduction in electron energy directe d towards the collector barrier. A measure of the high energy effectiv e mass in InGaAs resulted in a value of 0.08 times the free electron m ass. In addition, the application of a magnetic field parallel to the ballistic velocity induces a broadening and shift to higher energies o f the thermalized distribution. This result has been interpreted in te rms of a reduction in the scattering rate of energetic electrons due t o the imposition of quasi one-dimensional constraints by the magnetic field.