IMAGING MISFIT DISLOCATIONS IN EPITAXIAL COSI2 SI(111) LAYERS USING QUANTUM-SIZE MICROSCOPY

The tunneling microscope is used to excite electron standing waves in thin epitaxial layers of CoSi2/Si(111). We observe misfit dislocation lines in topographic images that correlate with domain boundaries dete cted in conductance images, indicating that they separate regions of d ifferent cobalt disilicide thicknesses. These thickness transitions ar e expected to occur at interface steps in association with the introdu ction of partial dislocations for strain relief in this lattice mismat ched system.