ADSORPTION SITES OF GE ADATOMS ON STEPPED SI(110) SURFACE

Authors
KATIRCIOGLU S ERKOC S
Citation
S. Katircioglu et S. Erkoc, ADSORPTION SITES OF GE ADATOMS ON STEPPED SI(110) SURFACE, Surface science, 311(3), 1994, pp. 120000703-120000706
Citations number
22
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
311
Issue
3
Year of publication
1994
Pages
120000703 - 120000706
Database
ISI
SICI code
0039-6028(1994)311:3<120000703:ASOGAO>2.0.ZU;2-W
Abstract
We have investigated the possible adsorption sites of Ge adatoms on st epped Si(110) surface by total electronic energy calculations using th e empirical tight-binding method. It has been found that Ge adatoms pr efer to bond to the Si atoms at or near the step. In the case of more than one adatom the minimum total electronic energy configuration corr esponds to the maximum number of saturated Si atoms.