TRAPPING OF A DIFFUSING ADATOM BY A SUBSTITUTIONAL SURFACE DEFECT

Citation
Mc. Fallis et al., TRAPPING OF A DIFFUSING ADATOM BY A SUBSTITUTIONAL SURFACE DEFECT, Surface science, 311(3), 1994, pp. 120000717-120000723
Citations number
23
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
311
Issue
3
Year of publication
1994
Pages
120000717 - 120000723
Database
ISI
SICI code
0039-6028(1994)311:3<120000717:TOADAB>2.0.ZU;2-6
Abstract
We propose a simple model to explain qualitatively the results of a re cent field-ion-microscopy (FIM) study in which a substitutional Ir ato m in the Rh(001) surface traps diffusing Rh adatoms [G.L. Kellogg, Phy s. Rev. Lett., to be published]. The proposed explanation is supported by an embedded-atom-method investigation of the effect of a substitut ional Pt atom in the Pd(001) surface on Pd adatom diffusion. We find a smaller energy barrier for a single adatom to diffuse around the defe ct than away from it, i.e., the adatom is effectively trapped by this defect in qualitative agreement with the FIM study. We also find that Pd adatom clusters are more strongly bound at the defect than away fro m it, indicating that such a defect can act as a nucleation site for c luster growth.