BURIED-OXIDE RIDGE-WAVE-GUIDE INALAS-INP-INGAASP (LAMBDA-SIMILAR-TO-1.3-MU-M) QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES

Native oxide technology is used to fabricate long wavelength (lambda a pproximately 1.3 mum) InAlAs-InP-InGaAsP quantum well heterostructure laser diodes with a buried oxide undercutting and constricting the rid ge-waveguide active region. The buried native oxide of InAlAs constric ts the current and reduces edge and surface losses. Data are presented showing threshold currents as low as approximately 140 mA for approxi mately 13-mum-wide stripes (L approximately 750 mum), with maximum con tinuous wave output powers as high as approximately 225 mW/facet and e xternal differential quantum efficiencies up to 67% (300 K, uncoated f acets).