INFLUENCE OF SURFACE-DEFECTS ON THE ELECTRICAL BEHAVIOR OF ALUMINUM-POROUS SILICON JUNCTIONS

Using transient-current measurements on porous silicon layers made on p+ silicon substrate, we characterize the surface defects of the porou s silicon material, i.e., the defects located at the interface between porous silicon and a thin layer of native oxide. An energy location n ear midgap (these defects can be efficient radiative lifetime killers) and a trap concentration in close agreement with the number of trival ent silicon defects-as measured by electron spin resonance-are deduced .