CHARACTERIZATION OF PROCESS-INDUCED STRAINS IN GAAS GA0.7AL0.3AS QUANTUM DOTS USING ROOM-TEMPERATURE PHOTOREFLECTANCE

Authors
QIANG H POLLAK FH TANG YS WANG PD TORRES CMS
Citation
H. Qiang et al., CHARACTERIZATION OF PROCESS-INDUCED STRAINS IN GAAS GA0.7AL0.3AS QUANTUM DOTS USING ROOM-TEMPERATURE PHOTOREFLECTANCE, Applied physics letters, 64(21), 1994, pp. 2830-2832
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
21
Year of publication
1994
Pages
2830 - 2832
Database
ISI
SICI code
0003-6951(1994)64:21<2830:COPSIG>2.0.ZU;2-N
Abstract
Using contactless photoreflectance at 300 K, we have studied several G aAs/Ga0.7Al0.3As quantum dot arrays fabricated by reactive-ion etching using SiCl4. The spectrum from a control sample that had no dots also was recorded. From the observed shifts of the fundamental conduction to heavy- and light-hole quantum transitions we have evaluated the mag nitude and nature of the process-induced strain in the dots.