ROOM-TEMPERATURE SHARP LINE ELECTROLUMINESCENCE AT LAMBDA=1.54-MU-M FROM AN ERBIUM-DOPED, SILICON LIGHT-EMITTING DIODE

We report the first room-temperature sharp line electroluminescence of an erbium-doped silicon light-emitting diode at lambda = 1.54 mum. Th e electroluminescence originates from an internal f-shell transition o f Er3+. The wavelength and linewidth are relatively independent of tem perature. The light intensity saturates at a drive current density of 5 A/cm2 due to the long excited state lifetime of Er3+. As the tempera ture increases from 100 K to room temperature, the light intensity dec reases significantly.