Bc. Chakravarty et al., IDENTIFICATION OF A MOVING PHASE OF AL2O3 BY AUGER-ELECTRON SPECTROSCOPY IN THE BACK ALUMINIZED SURFACE OF SI, Applied physics letters, 64(21), 1994, pp. 2847-2848
Backsurface aluminization of n on p silicon solar cells is preferred b
ecause it can provide backsurface field and getter lifetime killing im
purities. In this work, depth profiling has been done on aluminized ba
cksurfaces of silicon wafers which were heat treated at 660-820-degree
s-C in an ambient of POCl3 and oxygen gas mixture and a new moving pha
se of Al2O3 has been detected by Auger electron spectroscopy.