ENHANCED CONDUCTIVITY OF ZINC-OXIDE THIN-FILMS BY ION-IMPLANTATION OFHYDROGEN-ATOMS

Authors
KOHIKI S NISHITANI M WADA T HIRAO T
Citation
S. Kohiki et al., ENHANCED CONDUCTIVITY OF ZINC-OXIDE THIN-FILMS BY ION-IMPLANTATION OFHYDROGEN-ATOMS, Applied physics letters, 64(21), 1994, pp. 2876-2878
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
21
Year of publication
1994
Pages
2876 - 2878
Database
ISI
SICI code
0003-6951(1994)64:21<2876:ECOZTB>2.0.ZU;2-N
Abstract
Enhancement of the conductivity of zinc oxide through doping with hydr ogen atoms was examined by using ion implantation of highly resistive thin films deposited by rf magnetron sputtering at room temperature. W ith a doping of 1 X 10(17) atoms cm-2, the conductivity after annealin g at 200-degrees-C in an N2 atmosphere at 1 atm rose from the initial 1 X 10(-7) OMEGA-1 cm-1 to 5.5 X 10(2) OMEGA-1 cm-1.