ALKALI-METAL INDUCED HIGHEST FERMI-LEVEL PINNING POSITION ABOVE SEMICONDUCTOR CONDUCTION-BAND MINIMUM

Authors
ARISTOV VY LELAY G SOUKIASSIAN P HRICOVINI K BONNET JE OSVALD J OLSSON O
Citation
Vy. Aristov et al., ALKALI-METAL INDUCED HIGHEST FERMI-LEVEL PINNING POSITION ABOVE SEMICONDUCTOR CONDUCTION-BAND MINIMUM, Europhysics letters, 26(5), 1994, pp. 359-364
Citations number
25
Categorie Soggetti
Physics
Journal title
Europhysics letters → ACNP
ISSN journal
02955075
Volume
26
Issue
5
Year of publication
1994
Pages
359 - 364
Database
ISI
SICI code
0295-5075(1994)26:5<359:AIHFPP>2.0.ZU;2-8
Abstract
The room temperature deposition of small amounts of Cs on the InAs(110 ) surface induces the highest Fermi-level pinning position (approximat ely 0.6 eV) above the conduction band minimum ever met for any semicon ductor. The Fermi-level movement is monitored by core level photoemiss ion spectroscopy using synchrotron radiation. This striking behaviour is explained in terms of donor-type surface states induced by few Cs a toms present on InAs(110) and suggests the existence of a two-dimensio nal electron gas at the surface.