STRUCTURE AND ELECTRICAL-PROPERTIES OF HETEROMULTILAYERS ON P-SI(111)

Authors
LEI JA BAI YB WANG DJ LI TJ TIAN KE
Citation
Ja. Lei et al., STRUCTURE AND ELECTRICAL-PROPERTIES OF HETEROMULTILAYERS ON P-SI(111), Thin solid films, 243(1-2), 1994, pp. 459-462
Citations number
12
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
243
Issue
1-2
Year of publication
1994
Pages
459 - 462
Database
ISI
SICI code
0040-6090(1994)243:1-2<459:SAEOHO>2.0.ZU;2-F
Abstract
Heteromultilayers were fabricated under room conditions by the Langmui r-Blodgett method. The film structure and functional properties were s tudied using X-ray diffraction, polarized IR and UV spectra and I-V an d C-V measurements. The sample displays rectification and electrical s torage properties.