D. Barancok et al., U-SHAPED DISTRIBUTION OF INTERFACE STATES IN METAL (LANGMUIR-BLODGETT) SI STRUCTURES WITH PHTHALOCYANINE LANGMUIR-BLODGETT-FILMS, Thin solid films, 243(1-2), 1994, pp. 463-467
A considerable part of the effort aimed at practical applications of L
angmuir Blodgett (LB) films is based on metal-insulator-semiconductor
structures with an incorporated LB layer as the insulator. In accordan
ce with this trend the present communication deals with a study of the
metal LB-Si structures with thin copper tetra-4-t-butylphthalocyanine
films deposited by the conventional LB technique onto silicon substra
tes (rho almost-equal-to 5 OMEGA cm). The experimental methods used we
re deep-level transient spectroscopy in a charge-modification mode and
a feedback charge C - U method. The analysis of the results indicates
the existence of energy states at the LB Si interface. The states for
m a continuous U-shaped spectrum in the gap of the semiconductor. The
high density of the states (about 10(12) eV-1 cm-2) is typical of the
''wet'' technologies to which LB deposition belongs.