GROWTH OF CUBIC (ZINC BLENDE) CDSE BY ELECTRON-BEAM EVAPORATION AND THE STRUCTURAL CHARACTERISTICS OF CDSE GAAS EPILAYERS/

Growth of cubic (zinc blende) CdSe epilayers on (100) GaAs substrates by electron beam evaporation and their structural characteristics are reported. A new, improved technique using an e-beam evaporation system with a thickness/rate control monitor and a substrate heater has been developed to prepare cubic (zinc blende) CdSe/GaAs heteroepitaxial la yers in crystalline semiconductors. The lattice parameter of the CdSe epilayer is 6.077 Angstrom. The orientation of the as-grown CdSe epila yer is determined by electron channeling patterns, the crystallinity i s investigated using double-crystal X-ray rocking curve. The carrier c oncentration and the mobility of the epilayers, as deduced from Hall d ata, are 7.83 x 10(17) cm(-3) and 1.95 x 10(2) cm(2)/V . sec at room t emperature, respectively. The photocurrent spectrum peak of the film a t 30 K exhibits a sharp change at 1.746 eV due to the free exciton of cubic CdSe.