Ga2-XSbXSe3:Co2+ single crystals were grown by the Bridgman method, an
d the optical absorption spectra of the single crystals were measured.
The optical energy gaps of the single crystals and the impurity optic
al absorption properties due to the dopant cobalt were investigated. C
ompared with the optical energy gaps of Ga2-XSbXSe3 single crystals, t
he optical energy gaps of the Ga2-XSbXSe3:Co2+ single crystals showed
a red shift. The impurity optical absorption peaks due to the dopant c
obalt in the Ga2-XSbXSe3:Co2+ Single crystals were assigned to the ele
ctron transitions among the energy levels of the Co2+ ion sited at the
T-d symmetry point in the host materials, Ga2-XSbXSe3 single crystals
.