INCOMPLETE MELTING OF THE SI(001) SURFACE - A PHOTOELECTRON DIFFRACTION STUDY

Authors
FRAXEDAS J FERRER S COMIN F
Citation
J. Fraxedas et al., INCOMPLETE MELTING OF THE SI(001) SURFACE - A PHOTOELECTRON DIFFRACTION STUDY, Europhysics letters, 25(2), 1994, pp. 119-124
Citations number
22
Categorie Soggetti
Physics
Journal title
Europhysics letters → ACNP
ISSN journal
02955075
Volume
25
Issue
2
Year of publication
1994
Pages
119 - 124
Database
ISI
SICI code
0295-5075(1994)25:2<119:IMOTSS>2.0.ZU;2-J
Abstract
A high-energy photoelectron diffraction study of Si(001) at different temperatures reveals that at about 1400 K a surface phase transition o ccurs. It has been interpreted as being an incomplete melting. The thi ckness of the liquid film is estimated to be about 2 angstrom (or two atomic layers) on the basis of single-scattering cluster calculations.