XTEM, ELLIPSOMETRIC AND ARXPS STUDY OF A-SIOX AND A-GE THIN-FILMS ON SILICON SUBSTRATES

Authors
HUCEK S ZEMEK J RADNOCZI G SIROKY P
Citation
S. Hucek et al., XTEM, ELLIPSOMETRIC AND ARXPS STUDY OF A-SIOX AND A-GE THIN-FILMS ON SILICON SUBSTRATES, Czechoslovak journal of Physics, 44(3), 1994, pp. 245-253
Citations number
20
Categorie Soggetti
Physics
Journal title
Czechoslovak journal of Physics → ACNP
ISSN journal
00114626
Volume
44
Issue
3
Year of publication
1994
Pages
245 - 253
Database
ISI
SICI code
0011-4626(1994)44:3<245:XEAASO>2.0.ZU;2-P
Abstract
Cross sectional transmission electron microscopy (XTEM), ellipsometry and angular-resolved X-ray induced photoelectron spectroscopy (ARXPS) are used for the thin films thickness determination of a-SiO(x)/a-Ge/S i (111) structures. The ARXPS data are evaluated within a flat, unifor m and layered model neglecting or including the electron elastic scatt ering processes.