THE POSSIBILITIES AND LIMITATIONS OF ION- IMPLANTATION INTO DIAMOND AS COMPARED TO OTHER DOPING TECHNIQUES

Diamond as an extremely tightly spaced crystal must have low equilibri um solubilities and diffusion coeffecients for impurity atoms. Thus, i on implantation presents a way of doping worth trying. Existing experi mental data show that p-type and p+-type layers can be produced by B i on implantation. Li and C ion implantation results in n-type layer for mation. Diamond film grown in presence of P are reported to exhibit el ectron conductivity. The efficiency of the introduction of donors and acceptors by implantation depends critically on the diamond temperatur e during implantation and on the annealing process.