Ls. Hsu et Rs. Williams, ELECTRONIC-STRUCTURE STUDY OF THE NI-GA AND THE NI-IN INTERMETALLIC COMPOUNDS USING X-RAY PHOTOEMISSION SPECTROSCOPY, Journal of physics and chemistry of solids, 55(4), 1994, pp. 305-312
Polycrystalline Ni-Ga and Ni-In intermetallic compounds of various sto
ichiometric compositions have been examined by X-ray photoemission spe
ctroscopy. The observed valence-band spectra for all the compounds are
very similar to those for elemental Ni; those for Ni3Ga and NiIn agre
e rather well with the band-structure calculations of Kubo and Wakch [
Kubo and Wakch, J. Phys. F17, 397 (1987)] and Colinet et al. [Colinet,
Bessoud and Pasturel, Z. Metallkd 77, 798 (1986)], respectively. Only
a partial filling of the empty Ni 3d states occurs on forming compoun
ds with Ga or In.