ENERGY RELAXATION PROCESS OF PHOTOEXCITED ELECTRONS IN GAAS ALGAAS QUANTUM-WELL STRUCTURES/

Authors
FURUTA T SHIGEKAWA N TOMIZAWA M
Citation
T. Furuta et al., ENERGY RELAXATION PROCESS OF PHOTOEXCITED ELECTRONS IN GAAS ALGAAS QUANTUM-WELL STRUCTURES/, Semiconductor science and technology, 9(5), 1994, pp. 453-455
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
453 - 455
Database
ISI
SICI code
0268-1242(1994)9:5<453:ERPOPE>2.0.ZU;2-H
Abstract
The energy relaxation process is successfully measured for various qua ntum well structures. The measurements show a marked difference from b ulk characteristics as the well width becomes narrower. This implies t hat the two-dimensional nature of carriers plays an important role in the energy relaxation process. Monte Carlo simulation results support the experimental findings.