R. Rodrigues et al., ELECTRON-HOLE SCATTERING IN HIGHLY DOPED P-GAAS AFTER FEMTOSECOND OPTICAL-EXCITATION, Semiconductor science and technology, 9(5), 1994, pp. 456-458
The ultrafast relaxation of minority electrons in highly doped p-GaAs
(p = 1.0 X 10(19) cm-3 ) has been investigated through femtosecond tim
e-resolved luminescence. For low excitation densities the hole plasma
temperature stays at 300 K and the transient luminescence spectra reve
al the rapid cooling of the minority electrons within the first picose
conds. The electron-hole energy transfer is much larger (up to 10(-7)
W) than the known electron-LO phonon scattering rate. which allows the
quantitative determination of the electron-hole energy transfer.