ELECTRON-HOLE SCATTERING IN HIGHLY DOPED P-GAAS AFTER FEMTOSECOND OPTICAL-EXCITATION

Authors
RODRIGUES R JUEN SA LAMPRECHT KF HOPFEL RA
Citation
R. Rodrigues et al., ELECTRON-HOLE SCATTERING IN HIGHLY DOPED P-GAAS AFTER FEMTOSECOND OPTICAL-EXCITATION, Semiconductor science and technology, 9(5), 1994, pp. 456-458
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
456 - 458
Database
ISI
SICI code
0268-1242(1994)9:5<456:ESIHDP>2.0.ZU;2-I
Abstract
The ultrafast relaxation of minority electrons in highly doped p-GaAs (p = 1.0 X 10(19) cm-3 ) has been investigated through femtosecond tim e-resolved luminescence. For low excitation densities the hole plasma temperature stays at 300 K and the transient luminescence spectra reve al the rapid cooling of the minority electrons within the first picose conds. The electron-hole energy transfer is much larger (up to 10(-7) W) than the known electron-LO phonon scattering rate. which allows the quantitative determination of the electron-hole energy transfer.