MAGNETOTUNNELING MEASUREMENTS OF LOCALIZED OPTICAL PHONONS IN GAAS ALAS DOUBLE-BARRIER STRUCTURES/

Authors
TEITSWORTH SW TURLEY PJ WALLIS CR LI W BHATTACHARYA PK
Citation
Sw. Teitsworth et al., MAGNETOTUNNELING MEASUREMENTS OF LOCALIZED OPTICAL PHONONS IN GAAS ALAS DOUBLE-BARRIER STRUCTURES/, Semiconductor science and technology, 9(5), 1994, pp. 508-511
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
508 - 511
Database
ISI
SICI code
0268-1242(1994)9:5<508:MMOLOP>2.0.ZU;2-B
Abstract
We have measured current-voltage characteristics at liquid-helium temp erature and for magnetic fields up to 7 T (parallel to the current flo w) for three similar asymmetric GaAs/AlAs double-barrier structures, a ll of which possess large phonon-assisted tunnelling currents. Confine d longitudinal optical (LO) phonons in the GaAs well layer and LO-like symmetric interface phonons treated within a dielectric continuum pic ture suffice to account for the measured currents. Phonon-assisted tun nelling current levels as well as magnetotunnelling data are found to depend sensitively on well and barrier widths.