DEPENDENCE OF RESONANT ELECTRON AND HOLE TUNNELING TIMES BETWEEN QUANTUM-WELLS ON BARRIER THICKNESS

Authors
HEBERLE AP ZHOU XQ TACKEUCHI A RUHLE WW KOHLER K
Citation
Ap. Heberle et al., DEPENDENCE OF RESONANT ELECTRON AND HOLE TUNNELING TIMES BETWEEN QUANTUM-WELLS ON BARRIER THICKNESS, Semiconductor science and technology, 9(5), 1994, pp. 519-522
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
519 - 522
Database
ISI
SICI code
0268-1242(1994)9:5<519:DOREAH>2.0.ZU;2-T
Abstract
We investigated resonant tunnelling of electrons and holes between cou pled quantum wells using time-resolved luminescence spectroscopy. Expo nential dependence of tunnelling times on barrier width is observed fo r electrons but not for holes. The tunnelling times of electrons are c orrectly described by a model which takes into account inhomogeneous b roadening.