Dj. Lovering et al., A NOVEL OPTICAL STUDY OF THE TUNNELING RATE AND AMBIPOLAR TRANSPORT CHARACTERISTICS OF EXCITONS IN SUPERLATTICES WITH A VARIETY OF BARRIER THICKNESSES, Semiconductor science and technology, 9(5), 1994, pp. 526-529
We report the use of a time-resolved transient-grating technique to st
udy the in-plane ambipolar diffusion coefficient and interwell tunnell
ing probability for excitons in a number of multiple quantum well samp
les. Our specimens were selected with barrier thicknesses ranging from
14 to 141 angstrom thus giving complete coverage of the transition fr
om isolated quantum well to superlattice behaviour. Two types of MBE g
rowth conditions were used giving rise to samples with low or high sur
face defect density. The surface defect density had a strong effect on
the in-plane mobility but not the tunnelling probability. The samples
show surprisingly strong interwell coupling even with the thickest ba
rrier, which we attribute to defect assisted tunnelling.