ELECTROLUMINESCENCE AND MAGNETOTRANSPORT STUDIES OF A P-I-N SUPERLATTICE DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE

Authors
MAUDE DK KUHN O PORTAL JC HENINI M EAVES L HILL G PATE MA
Citation
Dk. Maude et al., ELECTROLUMINESCENCE AND MAGNETOTRANSPORT STUDIES OF A P-I-N SUPERLATTICE DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE, Semiconductor science and technology, 9(5), 1994, pp. 540-544
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
540 - 544
Database
ISI
SICI code
0268-1242(1994)9:5<540:EAMSOA>2.0.ZU;2-3
Abstract
Magnetotransport and electroluminescence measurements are reported for a p-i-n AlAs/GaAs double-barrier resonant tunnelling structure incorp orating superlattices in the emitter and collector. When a magnetic fi eld of 15 T is applied parallel to the current a pronounced region of negative differential resistance (NDR) is observed. Associated with th e NDR region in the current voltage characteristic the energy of the e lectroluminescence peak from the centre quantum well is shifted by mor e than 10 meV for a change in applied bias of only 1 mV as the device is swept through resonance.