PHOTOLUMINESCENCE OF DONOR ENERGY-LEVELS IN RESONANT-TUNNELING DEVICES

Authors
LANGERAK CJGM SAKAI JW BETON PH MAIN PC EAVES L HENINI M HILL G
Citation
Cjgm. Langerak et al., PHOTOLUMINESCENCE OF DONOR ENERGY-LEVELS IN RESONANT-TUNNELING DEVICES, Semiconductor science and technology, 9(5), 1994, pp. 549-551
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
549 - 551
Database
ISI
SICI code
0268-1242(1994)9:5<549:PODEIR>2.0.ZU;2-L
Abstract
Photoluminescence spectroscopy is used to investigate the donor-assist ed resonant tunnelling processes in double-barrier structures which in corporate a low-density delta-doped donor layer in the centre of the q uantum well. A quantum well luminescence line corresponding to hole-ne utral donor recombination is observed, along with two other lines at h igher photon energy. The possible origin of these two lines is discuss ed.