Ts. Turner et al., QUANTUM-WELL LUMINESCENCE DUE TO MINORITY PHOTOELECTRONS IN P-TYPE RESONANT-TUNNELING STRUCTURES, Semiconductor science and technology, 9(5), 1994, pp. 552-554
Photoluminescence spectroscopy is used to investigate p-type double-ba
rrier resonant tunnelling structures based on GaAs/AlAs. Strong photol
uminescence from the quantum well is observed due to recombination of
resonantly tunnelling holes with minority photogenerated electrons, wh
ich also tunnel into the quantum well. The luminescence undergoes a re
d shift with increasing bias and its intensity shows peaks at biases c
orresponding to the first four hole resonances in the current-voltage
characteristics. Two additional strong peaks are also seen in this int
ensity-bias plot, due to electron resonant tunnelling.