QUANTUM-WELL LUMINESCENCE DUE TO MINORITY PHOTOELECTRONS IN P-TYPE RESONANT-TUNNELING STRUCTURES

Citation
Ts. Turner et al., QUANTUM-WELL LUMINESCENCE DUE TO MINORITY PHOTOELECTRONS IN P-TYPE RESONANT-TUNNELING STRUCTURES, Semiconductor science and technology, 9(5), 1994, pp. 552-554
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
552 - 554
Database
ISI
SICI code
0268-1242(1994)9:5<552:QLDTMP>2.0.ZU;2-R
Abstract
Photoluminescence spectroscopy is used to investigate p-type double-ba rrier resonant tunnelling structures based on GaAs/AlAs. Strong photol uminescence from the quantum well is observed due to recombination of resonantly tunnelling holes with minority photogenerated electrons, wh ich also tunnel into the quantum well. The luminescence undergoes a re d shift with increasing bias and its intensity shows peaks at biases c orresponding to the first four hole resonances in the current-voltage characteristics. Two additional strong peaks are also seen in this int ensity-bias plot, due to electron resonant tunnelling.