A MICROSCOPIC INTERPRETATION OF HOT-ELECTRON NOISE IN SCHOTTKY-BARRIER DIODES

We present a microscopic analysis of current and voltage fluctuations in GaAs Schottky barrier diodes under forward-bias conditions in the a bsence of 1/f contributions. Calculations are performed by coupling se lf-consistently an ensemble Monte Carlo simulator with a one-dimension al Poisson solver. By using current and voltage operation modes we pro vide the microscopic origin and the spatial location of the noise sour ces respectively. The coupling between fluctuations in carrier velocit y and self-consistent field is found to be essential in determining th e noise spectra. Different types of noise (shot, thermal and excess) a re exhibited by the device at different voltages. In particular excess noise due to hot carriers and intervalley transfer is detected for th e highest voltages.