SUPPRESSION OF HOT-ELECTRON FLUCTUATIONS IN SUBMICROMETER SEMICONDUCTOR LAYERS

A physical model is proposed tor limitation and suppression of spectra l intensity of hot-electron fluctuations in submicrometre semiconducto r layers, where the thickness 2d of the sample is comparable to the el ectron energy relaxation length L(epsilon). We suppose two identical l ayer surfaces, no space charge and surface charges at zero bias, the e lectron temperature approach, and the surface velocity approximation. Electric field E and dimension 2d dependences of spectral densities of fluctuations, small-signal conductivities and noise temperatures are investigated. A decrease of the spectral intensity of hot-electron flu ctuations and noise temperature takes place when 2d < L(epsilon) in th e range of fluctuation frequencies omegatau(epsilon) much less than 1, where tau(epsilon) is the electron energy relaxation time.