ONSET OF CURRENT OSCILLATIONS IN EXTRINSIC SEMICONDUCTORS UNDER DC VOLTAGE BIAS

Citation
Ll. Bonilla et al., ONSET OF CURRENT OSCILLATIONS IN EXTRINSIC SEMICONDUCTORS UNDER DC VOLTAGE BIAS, Semiconductor science and technology, 9(5), 1994, pp. 599-602
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
599 - 602
Database
ISI
SICI code
0268-1242(1994)9:5<599:OOCOIE>2.0.ZU;2-H
Abstract
We present a model which describes the onset of current instabilities and space-charge domains in extrinsic semiconductors (especially p-Ge) under DC voltage bias. Just above the onset voltage for current insta bility we have found numerically small-amplitude fast oscillations due to the periodic motion of solitary waves which decay before reaching the receiving contact. For slightly larger applied voltages there is a n abrupt and slightly hysteretic transition to slower large-amplitude solitary waves similar to those in the Gunn effect. An amplitude equat ion is derived for long samples which reveals a quasicontinuum of osci llatory modes that become linearly unstable at onset.