HOT-PHONON EFFECT ON NOISE AND DIFFUSION IN GAAS

Authors
BORDONE P REGGIANI L VARANI L KUHN T
Citation
P. Bordone et al., HOT-PHONON EFFECT ON NOISE AND DIFFUSION IN GAAS, Semiconductor science and technology, 9(5), 1994, pp. 623-626
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
623 - 626
Database
ISI
SICI code
0268-1242(1994)9:5<623:HEONAD>2.0.ZU;2-8
Abstract
We analyse the effects of a non-equilibrium phonon population on noise and diffusion phenomena in polar semiconductors. We calculate the cur rent and energy autocorrelation functions and the current-energy cross -correlation functions, for both the case with and without hot-phonon effects. Owing to the presence of hot phonons, we find an increase of the noise equivalent temperature and of the longitudinal diffusion coe fficient at intermediate field strengths below the threshold for negat ive differential mobility.