Ag. Markelz et al., SUBCUBIC POWER DEPENDENCE OF 3RD-HARMONIC GENERATION FOR INPLANE, FAR-INFRARED EXCITATION OF INAS QUANTUM-WELLS, Semiconductor science and technology, 9(5), 1994, pp. 634-637
Large third-order, free-carrier nonlinear susceptibilities, chi(3) (to
approximately 0.2 esu), and subcubic dependence of the third-harmonic
power on the incident intensity, have been observed between 19 cm-1 a
nd 23 cm-1 for InAs/AlSb quantum wells with electron sheet densities b
etween 2.5 x 10(12) cm-2 and 8 X 10(12) cm-2. We find that the transmi
ssion of the fundamental, and the samples' DC conductivity, decrease w
ith increasing incident intensity, indicating a large rise in the scat
tering rate. Using the intensity-dependent transmission to account for
absorption in the sample is not sufficient to recover a cubic power l
aw for the third-harmonic intensity. In addition, given the increased
scattering rate indicated by the conductivity data, the bulk free-carr
ier chi(3) due to non-parabolicity should decrease dramatically with i
ncreasing fundamental intensity, contrary to our results. Thus, non-pa
rabolicity alone cannot account for the observed third-harmonic respon
se.