INFLUENCE OF IMPURITY ABSORPTION ON GERMANIUM HOT-HOLE LASER SPECTRA

Authors
HEISS W UNTERRAINER K GORNIK E HANSEN WL HALLER EE
Citation
W. Heiss et al., INFLUENCE OF IMPURITY ABSORPTION ON GERMANIUM HOT-HOLE LASER SPECTRA, Semiconductor science and technology, 9(5), 1994, pp. 638-640
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
638 - 640
Database
ISI
SICI code
0268-1242(1994)9:5<638:IOIAOG>2.0.ZU;2-S
Abstract
We investigate the stimulated emission spectra of p-Ge hot-hole lasers , To clarify the influence of impurity absorption we use for the first time a Tl-doped p-Ge laser. Since we observe a clear difference betwe en the spectrum of this laser and that of normally used Ga-doped laser s with respect to the 'emission gap' and to the low-frequency range, w e can give definite evidence that impurity transitions are involved in the lasing process.