POLARIZATION ANALYSIS OF HOT-CARRIER LIGHT-EMISSION IN SILICON

In this paper a theoretical-evaluation is given of the absolute intens ity and polarization of light emission from silicon devices due to con duction-conduction (c-c) and valence-valence (v-v) direct transitions. The matrix elements of the momentum operator between Bloch states hav e been obtained from a full band-structure calculation performed with the pseudopotential method. Results have been obtained by using both a nalytical model distribution functions and realistic hot-carrier distr ibutions obtained from Monte Carlo (MC) simulations based on the same band model. They show a polarization degree of a few per cent, which s hould be observable for these transitions.