We have determined for the first time the inter-Landau level lifetimes
in GaAs/GaAlAs heterostructures in the spin polarized region (filling
factor < 1). Intensity-dependent cyclotron resonance absorption has b
een measured using a high-intensity optically pumped far-infrared (FIR
) laser. A detailed analysis of the lineshape of the cyclotron resonan
ce absorption within a Drude model shows saturation at intensities of
0.1 W cm-2. The electronic lifetimes deduced using a three-level model
depend inversely on the electron concentration in the excited Landau
level, indicating electron-electron scattering to be the dominant rela
xation mechanism.