EFFECT OF HOT-ELECTRONS ON EXCITON LUMINESCENCE OF ULTRAPURE GAAS IN A MAGNETIC-FIELD

Authors
ROSSIN VV CHRISTIANEN PCM TRAVNIKOV VV
Citation
Vv. Rossin et al., EFFECT OF HOT-ELECTRONS ON EXCITON LUMINESCENCE OF ULTRAPURE GAAS IN A MAGNETIC-FIELD, Semiconductor science and technology, 9(5), 1994, pp. 716-718
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
716 - 718
Database
ISI
SICI code
0268-1242(1994)9:5<716:EOHOEL>2.0.ZU;2-U
Abstract
Exciton photoluminescence in ultrapure GaAs (total shallow impurity co ncentration N(D) approximately 10(12) cm-3) was studied in magnetic fi elds up to 20 T. The observed magnetic field enhancement of free-excit on luminescence and exciton cooling were found to depend strongly on t he excitation energy, giving direct evidence for the role of hot photo excited electrons. The observed effect in fact reflects cooling of ele ctrons in a magnetic field due to their increasing acoustic phonon ene rgy relaxation rate and an efficient exciton-electron interaction. In a magnetic field parallel to the sample surface a suppression of the e xciton-electron interaction was found because of the spatial separatio n of excitons and electrons.