Time-resolved Raman spectroscopy with subpicosecond resolution has bee
n used to measure L-GAMMA intervalley scattering of photoexcited elect
rons in GaSb. Our experiment measures directly the time-dependent occu
pancy of non-equilibrium longitudinal optic phonons with wavevector ap
proximately 10(6) cm-1 which are generated by intra-GAMMA relaxation o
f electrons near the GAMMA minimum. The phonon population shows a two-
component decay: at times less than or similar to 10 ps, phonons are g
enerated by direct electron relaxation within the GAMMA valley, and th
eir decay is due to anharmonicity and reabsorption. At later times the
phonon decay rate slows, as L-GAMMA intervalley scattering heats elec
trons at GAMMA. At low temperature the intervalley relaxation time is
measured to be 54 ps, corresponding to an effective intervalley deform
ation potential D(GAMMAL) = 3.2 eV angstrom-1.