HOT-PHONON REABSORPTION BY FREE-CARRIERS IN QUANTUM-WELLS

Authors
BROCKMANN P YOUNG JF HAWRYLAK P VANDRIEL HM
Citation
P. Brockmann et al., HOT-PHONON REABSORPTION BY FREE-CARRIERS IN QUANTUM-WELLS, Semiconductor science and technology, 9(5), 1994, pp. 746-748
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
746 - 748
Database
ISI
SICI code
0268-1242(1994)9:5<746:HRBFIQ>2.0.ZU;2-N
Abstract
The influence of a quasi-equilibrium electron-hole plasma on the popul ation lifetime of non-equilibrium longitudinal optic (LO) phonons is s tudied in GaAs quantum wells using a multiple-beam Raman scattering te chnique to separately control the phonon generation and free-carrier i njection processes. The lifetime of non-equilibrium, small-wavevector LO phonons is found to decrease from 4.5 ps to 1.9 ps as the density o f the cold plasma is increased to approximately 3 x 10(11) cm-2 by adj usting the intensity of an infrared laser tuned close to the lowest su bband gap of the quantum wells.