TIME-RESOLVED STUDIES OF HOT CARRIERS AND EXCITONS IN MBE-GROWN ZNTE GASB EPILAYERS

Authors
MCNAMEE MJ TAYLOR RA SNOW PA HAYES W ASHENFORD DE LUNN B
Citation
Mj. Mcnamee et al., TIME-RESOLVED STUDIES OF HOT CARRIERS AND EXCITONS IN MBE-GROWN ZNTE GASB EPILAYERS, Semiconductor science and technology, 9(5), 1994, pp. 759-761
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
759 - 761
Database
ISI
SICI code
0268-1242(1994)9:5<759:TSOHCA>2.0.ZU;2-0
Abstract
We report time-resolved luminescence measurements of MBE-grown ZnTe/Ga Sb. Above-bandgap excitation is provided by second-harmonic generation using infrared pulses from a Ti:sapphire laser. Cooling of the hot-ca rrier distribution is observed on a picosecond time-scale, and is seen to be limited by phonon bottle-necking at these carrier densities, al lowing an estimate of the LO phonon lifetime in this material.