HOT-ELECTRON RELAXATION VIA THE EMISSION OF GAAS OPTICAL MODES AND ALAS INTERFACE MODES IN GAAS ALAS MULTIQUANTUM WELLS

Authors
OZTURK E CONSTANTINOU NC STRAW A BALKAN N RIDLEY BK RITCHIE DA LINFIELD EH CHURCHILL AC JONES GAC
Citation
E. Ozturk et al., HOT-ELECTRON RELAXATION VIA THE EMISSION OF GAAS OPTICAL MODES AND ALAS INTERFACE MODES IN GAAS ALAS MULTIQUANTUM WELLS, Semiconductor science and technology, 9(5), 1994, pp. 782-785
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
782 - 785
Database
ISI
SICI code
0268-1242(1994)9:5<782:HRVTEO>2.0.ZU;2-0
Abstract
We demonstrate via hot-electron photoluminescence and high-temperature mobility measurements the importance of the AlAs interface mode in th e energy relaxation of electrons in GaAs/AlAs multi-quantum wells. A c orresponding investigation of a similar GaAs/Al0.24Ga0.76As system ill ustrates that this is not the case for AlGaAs barrier devices where Ga As modes are the dominant energy relaxation process. The importance of the AlAs interface mode is not simply related to its intrinsic scatte ring rate but also to its shorter lifetime (compared with GaAs modes). Hot-phonon effects are therefore crucial to a full understanding of t he experimental data.