FAR-INFRARED EMISSION FROM 2-DIMENSIONAL ELECTRON AND HOLE GASES IN GAAS (ALGA)AS HETEROJUNCTIONS

An investigation has been made of the far-infrared emission (FIR) from two-dimensional electron and hole gases (2DEGs and 2DHGS) in GaAs/(Al Ga)As heterostructures as a function of source-drain current and magne tic field. The results on 2DEGS indicate that the proportion of FIR co ming from the bulk of the 2DEG, rather than from the diagonally opposi te corners near the contacts where a significant amount of the dissipa tion takes place, varies with both current and magnetic field. The res ults on 2DHGS suggest that the carrier temperatures are very much lowe r than those in 2DEGS for the same source-drain current.