1ST-PRINCIPLES MONTE-CARLO SIMULATION OF TRANSPORT IN SI

Authors
Citation
Pd. Yoder et K. Hess, 1ST-PRINCIPLES MONTE-CARLO SIMULATION OF TRANSPORT IN SI, Semiconductor science and technology, 9(5), 1994, pp. 852-854
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
9
Issue
5
Year of publication
1994
Supplement
S
Pages
852 - 854
Database
ISI
SICI code
0268-1242(1994)9:5<852:1MSOTI>2.0.ZU;2-N
Abstract
We have constructed a unique Monte Carlo simulator incorporating the f ull band structure of the semiconductor, a realistic phonon spectrum a nd anisotropic electron-phonon scattering rates generated by ab initio electron-phonon matrix elements. Our computational model provides us with a rigorous test of our ability to formulate and calculate semicla ssical transport properties based on fundamental physical principles. By treating the relevant scattering mechanisms with a greater degree o f sophistication, we have drastically reduced the number of adjustable parameters and thereby hope to gain some measure of confidence in the calculated high-energy tail of the distribution function.