We have constructed a unique Monte Carlo simulator incorporating the f
ull band structure of the semiconductor, a realistic phonon spectrum a
nd anisotropic electron-phonon scattering rates generated by ab initio
electron-phonon matrix elements. Our computational model provides us
with a rigorous test of our ability to formulate and calculate semicla
ssical transport properties based on fundamental physical principles.
By treating the relevant scattering mechanisms with a greater degree o
f sophistication, we have drastically reduced the number of adjustable
parameters and thereby hope to gain some measure of confidence in the
calculated high-energy tail of the distribution function.