ELECTRONIC RELAXATION IN QUASI-ONE-DIMENSIONAL AND ZERO-DIMENSIONAL STRUCTURES

We report on theoretical investigations bearing on carrier relaxation among electronic states in III-V semiconductors. Electron scattering b y longitudinal optical and acoustic phonons is considered for quasi-tw o-, one- and zero-dimensional (2D, 1D and 0D) structures. In the 0D ca se, the calculated electron-phonon scattering rates decrease strongly with increasing spatial quantization. Exciton-phonon scattering and el ectron relaxation by Auger processes in 0D structures are studied. We briefly discuss the impact of the relaxation properties on the prospec t of devices and compare the theoretical results with optical experime nts.